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Current Nanoscience

Editor-in-Chief

ISSN (Print): 1573-4137
ISSN (Online): 1875-6786

Impact of Nano-Texturing in GaN-based Light Emitting Diodes by Self-Assembled Silver Microspheres as Etch Mask

Author(s): Periyayya Uthirakumar, Beo Deul Ryu, Ji Hye Kang, Hyung Gu Kim and Chang-Hee Hong

Volume 7, Issue 6, 2011

Page: [1000 - 1003] Pages: 4

DOI: 10.2174/157341311798220673

Price: $65

Abstract

We demonstrate a facile one-step thermal conversion method for the formation of self-assembled three dimensional silver (Ag) microspheres. The total conversion of Ag microspheres from the source materials at an elevated temperature is confirmed via various characterization techniques. The density of self-assembled Ag microspheres can be controlled by adjusting the precursor solution concentration. p-GaN nano-texturing is performed using an inductively coupled plasma (ICP) treatment, with the help of self-assembled Ag microspheres as a mask. The light extraction efficiency of the p-GaN nano-textured light emitting diode (LED) shows a significant improvement of ˜25% over that of conventional LEDs at an injection current of 20 mA.

Keywords: Optoelectronics, silver microspheres, surface texturing, light-emitting diodes, microstructure, Etch Mask

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