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Current Nanoscience

Editor-in-Chief

ISSN (Print): 1573-4137
ISSN (Online): 1875-6786

A Model to Improve Analysis of CNTFET Logic Gates in Verilog-A-Part I: Static Analysis

Author(s): Gennaro Gelao, Roberto Marani, Luciano Pizzulli and Anna Gina Perri

Volume 11, Issue 4, 2015

Page: [515 - 526] Pages: 12

DOI: 10.2174/1573413711666150320231414

Price: $65

Abstract

In this paper we have implemented a simple DC model for CNTFETs already proposed by us in order to carry out static analysis of basic digital circuits, with a significant improvement compared to Wong model. In particular we have obtained a lighter ensuring compile and shorter execution time, without losing in accuracy.

Keywords: CNTFETs modelling, digital applications, noise margin, sub threshold currents.

Graphical Abstract

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