III-V Semiconductor Nanowire Light Emitting Diodes and Lasers
Pp. 145-157 (13)
Junichi Motohisa, Katsuhiro Tomioka, Bin Hua, Kumar S.K. Varadwaj, Shinjiroh Hara, Kenji Hiruma and Takashi Fukui
We describe the growth and optical properties of III-V semiconductor nanowires and their application
to nanoscale photonic devices such as Fabry-Perot cavity, waveguides, optically-pumped lasers, and lightemitting
diodes. The nanowires were grown by selective-area metalorganic vapor phase epitaxy (SA-MOVPE) on
the (111) oriented substrates. Nanowires containing heterostructures in their radial direction, that is, core-shell
heterostructures, have also been realized by controlling the growth mode during SA-MOVPE. The nanowires
were characterized by micro-photoluminescence measurements and those detached from the grown substrate
showed resonant peaks associated with Fabry-Perot cavity modes. It was simultaneously shown that core-shell
hetereostructured nanowires exhibited stronger photoluminescence than bare nanowires due to reduced surface
non-radiative recombination. Furthermore, core-shell nanowires exhibited lasing oscillation originating from the
cavity formed by both end facets at pulsed-laser excitation. Meanwhile, electroluminescence from core-shell
nanowires was also demonstrated.
Metalorganic vapor phase epitaxy, selective-area growth, core-shell heterostructures, fabry-perot cavity,
waveguide, laser, light emitting diode.
Graduate School of Information Science and Technology, Hokkaido University, Japan.