Background: Among the various technologies for the chemical vapor deposition of diamond,
Microwave Plasma CVD (MPCVD) is a widely used technique for high quality diamond films.
It has been proven that the growth rate and quality of diamond can be improved by increasing the
plasma power density and gas pressure.
Objective: The purpose of this paper is to describe a recently patented MPCVD method for depositing
Method: In this paper, a recently patented MPCVD method is analyzed from four aspects: theoretical
background, principle of the application of MPCVD, diagram of MPCVD system and deposition parameters.
Results: The patented MPCVD system and resulting diamond film improved the relative technology
and put forward a helpful method of diamond film deposition.
Conclusion: The MPCVD method improved the growth rate and quality of the deposited diamond film
as a result of its changeable power and gas pressure. The diamond film prepared under these conditions
was continuous and dense.