Abstract
Non uniform channel doping profile enables us to control threshold voltage suppressing short channel effects. We showed how threshold voltage Vth is controlled for various channel doping profiles such as epi-channel, and counter doped channel. Vth is controlled by the thickness of epi-layer in epi-channel MOSFETs and it is controlled widely with centroid and dose in counter doped channel MOSFETs. The models were verified by comparing with numerical data. The feasibility of counter doped channel is also studied.
Keywords: Arbitrary doped channel, Channel doping, Counter doped channel, Epi-channel MOSFET, Gauss’s law, Joined half Gaussian, Multiple ion implantation, Poisson equation, Retrograde channel, Short channel immunity, Subthreshold characteristics, Threshold voltage.
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