Optimization of Scattering Parameters Through Numerical Investigation of One-Bit RF MEMS Switch Over Ku, K and Ka Band

Title:Optimization of Scattering Parameters Through Numerical Investigation of One-Bit RF MEMS Switch Over Ku, K and Ka Band

Volume: 13 Issue: 3

Author(s): Pampa Debnath, Ujjwal Mondal and Arpan Deyasi*

Affiliation:

• Department of Electronics and Communication Engineering, RCC Institute of Information Technology, Kolkata, Canal South Road, Beliaghata,India

Keywords: Return loss, insertion loss, isolation loss, overlap area, actuated state, unactuated state, RF-MEMS switch.

Abstract:

Aim: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates.

Objective: Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and corresponding up and down-capacitances are obtained.

Methods: The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a prime candidate for phase shifter application. This is presented in this manuscript with a keen focus on improvement capability by changing transmission line width, and also of overlap area; where dielectric constant of the substrate also plays a vital role.

Results: The present work exhibits very low down-capacitance over the spectrum whereas a considerable amount of up-capacitance. Also when overall performance in terms of all loss parameters are considered, switch provides very low insertion loss, good return loss under actuated state and standard isolation loss.

Conclusion: Reduction of transmission line width of about 33% improved the performance of the switch by increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave spectra for SiO₂ at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as compared with other published literature. Moreover, a better combination of both return loss, isolation loss and insertion loss are reported in this present work compared with all other published data so far.

Cite this article as:

Debnath Pampa , Mondal Ujjwal and Deyasi Arpan *, Optimization of Scattering Parameters Through Numerical Investigation of One-Bit RF MEMS Switch Over Ku, K and Ka Band, Micro and Nanosystems 2021; 13 (3) . https://dx.doi.org/10.2174/1876402912999201102200350