A New Approach to Design and Implementation of 2-Input XOR Gate Using 4-Transistor

Title:A New Approach to Design and Implementation of 2-Input XOR Gate Using 4-Transistor

Volume: 12 Issue: 3

Author(s): Heranmoy Maity*

Affiliation:

• Department of Electronic and Communications Engineering, NSHM Knowledge Campus Durgapur, West Bengal,India

Keywords: Logic gate, inverter, MOSFET, multiplexer, XOR gate, transistsor.

Abstract:

Aim: This paper proposed the design and implementation of a 2-input XOR gate using 4- transistor.

Method: The XOR gate can be designed using NOT gate and 2:1 multiplexer. The NOT gate is designed using two metal–oxide–semiconductor field-effect transistors MOSFETs and an approximate 2:1 multiplexer. The 2:1 multiplexer is designed using two MOSFETs. So, an XOR gate can be designed using four transistors.

Results: The proposed work theoretically and experimentally describes the 2-input XOR gate using 4- transistor. The proposed work was verified using Xilinx (ISE Design Suite).

Cite this article as:

Maity Heranmoy*, A New Approach to Design and Implementation of 2-Input XOR Gate Using 4-Transistor, Micro and Nanosystems 2020; 12 (3) . https://dx.doi.org/10.2174/1876402912666200309120205