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International Journal of Sensors, Wireless Communications and Control

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ISSN (Print): 2210-3279
ISSN (Online): 2210-3287

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Research Article

Low Power Wide Fan-in Domino OR Gate Using CN-MOSFETs

Author(s): Deepika Bansal*, Bal Chand Nagar, Brahamdeo Prasad Singh and Ajay Kumar

Volume 10, Issue 1, 2020

Page: [55 - 62] Pages: 8

DOI: 10.2174/2210327909666190207163639

Price: $65

Abstract

Background & Objective: In this paper, a modified pseudo domino configuration has been proposed to improve the leakage power consumption and Power Delay Product (PDP) of dynamic logic using Carbon Nanotube MOSFETs (CN-MOSFETs). The simulations for proposed and published domino circuits are verified by using Synopsys HSPICE simulator with 32nm CN-MOSFET technology which is provided by Stanford.

Methods: The simulation results of the proposed technique are validated for improvement of wide fan-in domino OR gate as a benchmark circuit at 500 MHz clock frequency.

Results: The proposed configuration is suitable for cascading of the high performance wide fan-in circuits without any charge sharing.

Conclusion: The performance analysis of 8-input OR gate demonstrate that the proposed circuit provides lower static and dynamic power consumption up to 62 and 40% respectively, and PDP improvement is 60% as compared to standard domino circuit.

Keywords: Carbon nano-tubes, charge sharing, CN-MOSFET, dynamic logic, keeper, stack.

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