Abstract
The fundamentals of technologies applied for preparation of narrow-gap semiconductors Hg(Zn)CdTe are presented. The lecture discusses questions related to the technologies and device applications of active elements based on HgZnCdTe materials.
Keywords: Cadmium mercury telluride, quaternary solid solutions, phase diagrams, infrared detectors, current-voltage characteristic, capacitance-voltage characteristic, energy band diagram, atmospheric oxygen.
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