Preface
Page: i-iv (4)
Author: Sunipa Roy*, Chandan Kumar Ghosh*, Sayan Dey* and Abhijit Kumar Pal*
DOI: 10.2174/9789815079876123010001
Fundamentals of Semiconductor Physics
Page: 1-58 (58)
Author: Sunipa Roy*, Chandan Kumar Ghosh*, Sayan Dey* and Abhijit Kumar Pal*
DOI: 10.2174/9789815079876123010002
PDF Price: $15
Abstract
In recent times, crystalline semiconductors have played a major role in
device fabrication for all purposes, where crystal structure plays the most crucial role.
Herein, all kinds of fundamental unit cell structures have been briefly discussed,
whereas Miller indices have been introduced to illustrate the orientation of the crystal
structures. Basic quantum mechanics have been introduced in order to explain the
fundamental properties of semiconducting materials. In this context, Sommerfeld’
free electron theory has been considered. Although this model corroborates with a few
experimental observations, but can’t differentiate between semiconductors, insulators
and metals. Then Kronig – Penney, which successfully explains the deviation on the
basis of the band concept, has been considered. Following the Kronig – Penney model,
Bloch’s theory has been introduced, and it well explains the origin of conduction and
valence bands. From this concept, different types of semiconducting materials, e.g.,
direct and indirect band gap semiconductors, n- and p-type semiconductors, etc., have
emerged. Here, properties of charge carriers, such as their charge, effective mass etc.,
have also been discussed. Knowing these parameters, conductivity expression and
related scattering phenomena influencing conductivity have been briefly elaborated.
Fundamentals of p – n Junction
Page: 59-90 (32)
Author: Sunipa Roy*, Chandan Kumar Ghosh*, Sayan Dey* and Abhijit Kumar Pal*
DOI: 10.2174/9789815079876123010003
PDF Price: $15
Abstract
In this chapter, fundamentals of the p – n junction, electric field across the
junction, equilibrium carrier concentration on each side, etc., have been briefly
discussed. Expression of built-in potential in terms of carrier density has been derived.
Magnitudes of the current under zero, forward, and reverse biased conditions have
been calculated. Unlike a resistor, p – n junction corresponds to static, dynamic and
average ac resistance, and they have been briefly discussed here along with protocol
to examine their values. These p – n junctions also exhibit capacitance, namely
transition capacitance and diffusion capacitance. Herein, these parameters and their
relevance in current-voltage characteristics of p – n junction and applicational aspects
have been elaborated.
Metal Semiconductor Contacts Schottky Diodes
Page: 91-121 (31)
Author: Sunipa Roy*, Chandan Kumar Ghosh*, Sayan Dey* and Abhijit Kumar Pal*
DOI: 10.2174/9789815079876123010004
PDF Price: $15
Abstract
Metal-Semiconductor-Junction is also called heterojunction since the
material on each side of the junction is not identical. The normal pn junction diode
concept can also be applied here. There are two probable types of metal semiconductor junctions: Schottky junction and ohmic junction. When the work function of metal is greater than the work function of a semiconductor, then this is
called Schottky junction. Ohmic junctions are the junctions in which the work
function of the metal is less than the work function of a semiconductor. Their band
engineering discussed in detail the essentials of junction physics.
Junction Field Effect Transistor
Page: 122-161 (40)
Author: Sunipa Roy*, Chandan Kumar Ghosh*, Sayan Dey* and Abhijit Kumar Pal*
DOI: 10.2174/9789815079876123010005
PDF Price: $15
Abstract
FET is a resistor whose resistance value is controlled by the potential
applied to the control terminal termed as Gate. The conducting region is called a
channel which may be either p type or n type based on the substrate used. The channel
conductivity mainly depends on the gate region. I-V characteristics are expressed in
a detailed manner with necessary equations. JFET parameters are another crucial
factor to understand its characteristics. The small signal model of JFET is illustrated
in a very lucid manner.
Metal Oxide Field Effect Transistor (MOSFET)
Page: 162-248 (87)
Author: Sunipa Roy*, Chandan Kumar Ghosh*, Sayan Dey* and Abhijit Kumar Pal*
DOI: 10.2174/9789815079876123010006
PDF Price: $15
Abstract
More or less than 17 years since D. Kahng and M. M. Atalla first conveyed
the demonstration of a Si-SiO2 MOS transistor (MOSFET). In our regular lives, the
impression of these MOS-based IC’s was imparted -just beginning to be felt. This
incredible explosion has been caused by many inventions and countless numbers of
perhaps small but crucial contributions by many researchers. Historical signs of
progress of the metal-oxide-semiconductor field-effect transistor (MOSFET) during
the last 60 years are appraised, from the 1928 patent disclosures of the field-effect
conductivity modulation concept and the semiconductor triodes structures proposed
by Lilienfeld to the 1947 Shockley-originated efforts which controlled to the
laboratory demonstration of the modern silicon MOSFET 30 years later in 1960. A
review is then made of the mileposts of the past 30 years leading to the latest
submicron silicon logic CMOS (Complementary MOS and BICMOS (Combination
of Bipolar-junction-Transistor and CMOS) arrays and the three-dimensional and
ferroelectric extensions of Dennard‘s one-transistor dynamic random access memory
(DRAM) cell. This chapter discusses the fabrication of MOSFET and its principal
operations based on the concept of metal-oxide-semiconductor technology. Further,
the discussion is focused on the details mathematical modeling of MOS capacitors,
device characteristics, and the process of channel length modulation and its
application. The conversation is continuing on the concept of CMOS technology and
its combination with the transistor – the BiCMOS technology.
Semiconductor Devices
Page: 249-279 (31)
Author: Sunipa Roy*, Chandan Kumar Ghosh*, Sayan Dey* and Abhijit Kumar Pal*
DOI: 10.2174/9789815079876123010007
PDF Price: $15
Abstract
Semiconductor materials are beneficial in their performance and can be
easily deployed by the addition of impurities known as doping. The resistivity of the
semiconductor can be changed by incorporating the electric or magnetic field, light
or heat, or mechanical distortion. Therefore, semiconductors can make excellent
devices. Current conduction in a semiconductor happens due to free electrons and
holes, jointly known as charge carriers. Doping of silicon significantly increases the
number of electrons or holes within the semiconductor, making it “p-type” or “n-type.” This doping characteristic is a blessing to make a possible number of devices
like LED, Tunnel diode, Solar cells, and many more, which have been discussed in
this section.
Silicon
Page: 280-301 (22)
Author: Sunipa Roy*, Chandan Kumar Ghosh*, Sayan Dey* and Abhijit Kumar Pal*
DOI: 10.2174/9789815079876123010008
PDF Price: $15
Abstract
This chapter introduces silicon as an electronic material for microelectronic
device fabrication. It discusses, in-depth, the various aspects of crystalline silicon,
wafer manufacturing and their identification techniques. Finally, the various steps
involved in a microfabrication process are also discussed. From this chapter, the
readers are expected to learn how to process a silicon wafer successfully and proceed
with customized device fabrication.
Oxidation
Page: 302-321 (20)
Author: Sunipa Roy*, Chandan Kumar Ghosh*, Sayan Dey* and Abhijit Kumar Pal*
DOI: 10.2174/9789815079876123010009
PDF Price: $15
Abstract
This chapter introduces the readers to the oxidation process focusing on
silicon. It establishes the importance of oxidation in a silicon process and discusses
the thermal oxidation process and its growth mechanism in depth. Towards the end,
a detailed discussion on the oxide film characterization and its properties is provided.
After reading this chapter, the readers are expected to have a sound knowledge of the
oxidation process as a whole and its significance in the silicon processing industry.
Diffusion
Page: 322-331 (10)
Author: Sunipa Roy*, Chandan Kumar Ghosh*, Sayan Dey* and Abhijit Kumar Pal*
DOI: 10.2174/9789815079876123010010
PDF Price: $15
Abstract
This chapter introduces the readers to the diffusion process of doping
intrinsic silicon. It discusses Fick’s Law of diffusion in-depth and the different types
of diffusion that may be observed. Towards the latter part of the chapter, the diffusion
process in semiconductors has been discussed in detail, explaining the diffusion-assisted doping process commonly employed for semiconductors, especially silicon
Ion Implantation
Page: 332-346 (15)
Author: Sunipa Roy*, Chandan Kumar Ghosh*, Sayan Dey* and Abhijit Kumar Pal*
DOI: 10.2174/9789815079876123010011
PDF Price: $15
Abstract
This chapter discusses the ion implantation process of silicon processing
technology in depth. The chapter gives an in-depth insight into various aspects of the
ion implantation process and ion-implanted silicon systems commonly encountered
in a silicon process. After reading this chapter, the readers will have a sound
understanding of the ion implantation process and its various aspects.
MEMS in Improved Efficiency
Page: 347-368 (22)
Author: Sunipa Roy*, Chandan Kumar Ghosh*, Sayan Dey* and Abhijit Kumar Pal*
DOI: 10.2174/9789815079876123010012
PDF Price: $15
Abstract
Micro-Electro-Mechanical Systems or MEMS, are an achievement of this
era and revolutionized the semiconductor industry. It is the amalgamation of
microelectronics with micromachining technology. Though the term mechanical is
one of the keywords of MEMS but not necessarily, micromachined devices should
not contain mechanical parts always. Machine means cutting tools. In MEMS
technology, the micron-level substrates are cut down to fabricate the device. The
primary purpose of MEMS technology is miniaturization with low power
consumption. The term MEMS can be described in many ways. In a single sense,
MEMS is a platform on top of which some common microscopic mechanical parts,
e.g., channels, holes, cantilevers, membranes, cavities, and other structures, can be
fabricated. Though micromachining is associated with MEMS, still the structures are
not machined. Instead, they are created using micro-fabrication technology suitable
for batch processing for integrated circuits.
Lithography
Page: 369-389 (21)
Author: Sunipa Roy*, Chandan Kumar Ghosh*, Sayan Dey* and Abhijit Kumar Pal*
DOI: 10.2174/9789815079876123010013
PDF Price: $15
Abstract
A few lithography techniques have been developed in the past few decades
with improvements in lens systems and advanced radiation sources for exposure, such
as photons, X-rays, electrons, ions, and neutral atoms. With each type of exposure
source, the instrumental details significantly change. However, the fundamental
principle behind the lithographic approaches remains the same. Photolithography is
the most intensive technique in microelectronic fabrication, especially for the bulk
production of integrated circuits (ICs). Below the different types of lithography
techniques are described in detail.
Subject Index
Page: 390-394 (5)
Author: Sunipa Roy*, Chandan Kumar Ghosh*, Sayan Dey* and Abhijit Kumar Pal*
DOI: 10.2174/9789815079876123010014
Introduction
Solid State & Microelectronics Technology is a comprehensive textbook designed for courses in solid state device physics as part of electronics / electrical engineering and IT courses. The book has two main objectives aimed at students and the future engineer: 1) to deliver knowledge of quantum physics and 2) to familiarize them with modern device types and fabrication processes. The breadth of subjects covered in the book serves a useful integrative function in combining fundamental science with applications. Recent developments are illustrated thoughtfully to encourage the reader to adopt this field as their research area. Key features - Adopts a twin approach to learning about solid state devices by blending information about fundamental science with the latest fabrication technology - Covers topics recently introduced into current curricula to cater to the demands of modern engineering - Provides foundational information on quantum physics, semiconductors and electronics - Provides details about advanced devices such as BiCMOS, MESFET and FinFet devices - Encourages readers to pursue further research with detailed illustrations and references