Bipolar Transistor and MOSFET Device Models

The Single-Gate SOI MOSFET Model

Author(s): Kunihiro Suzuki

Pp: 465-493 (29)

Doi: 10.2174/9781681082615116010011

* (Excluding Mailing and Handling)

Abstract

Single-gate SOI MOSFET has been proposed to alleviate scaling limit of bulk MOSFETs. We show an analytical model for threshold voltage for the device considering two-dimensional effects in both SOI and buried oxide layers. The model explains the dependence of short channel effects on the device parameters of channel-doping concentration, gate oxide, SOI, and buried oxide thicknesses, which agree well with numerical data.


Keywords: Characteristic length, Fully-depleted, Gate length, Poisson equation, Scaling theory, Short channel effects, Short channel immunity, SOI, Subthreshold swing, Surface potential, Threshold voltage.

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