Physics and Technology of Semiconductor Thin Film-Based Active Elements and Devices

Design of Active Elements Based on Nanostructural A1B5C6 Materials

Author(s): Halyna Khlyap

Pp: 96-108 (13)

DOI: 10.2174/978160805021510901010096

* (Excluding Mailing and Handling)


Preparation and main electrophysical characteristics of A1B5C6 nanostructural semiconductor materials are discussed. Sensor devices designed for external electric field detection and operation in aggressive environments are described. Numerical simulation of the main electrical characteristics of these structures is also reported.

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