Abstract
We are constantly looking to scale down the dimensions of transistors to
increase density in the same specific area and at the same time, having powerful
functions and increased performance. We have now reached the stage of submicron
technology where MOSFETs (metal oxide semiconductor field effect transistors) and
FinFETs (fin shaped field effect transistors) cannot be scaled down further. MOSFETs
replaced BJTs decades ago, but now transistors seem to have hit their end. While
semiconductor giants have a road map to produce 2 nm transistors, scaling down
further is next to impossible. Later, FinFETs were considered as their 3-dimensional
structure enabled greater density, greater computational power, and lower switching
times. But scaling down also means more thermal generation. Thermal effects, high
capacitances, and high fabrication costs deemed FinFETs not very suitable for scaling
down beyond 7nm. How can we enable transistors to scale down further and follow
Moore’s law? The next apparent step would be nanotechnology. While it could be a
revolution in VLSI it comes with its own cons and challenges. While there is a lot of
research going on regarding the same, this chapter will discuss types of nanomaterials
based on dimensions like 0D, 1D, 2D, and 3D, and their respective roles in
semiconductor FETs and why it is the next sensible step in the semiconductor industry.
Keywords: Carbon nanotubes, Gate all around FETs, Light emitting FETs, Multi-bridge channel FETs, Nanomaterials, Nanowires, Nanosheets, Nanoparticles, Quantum dots, Semiconductor FETs.