Nanoelectronics Devices: Design, Materials, and Applications Part II

Electromagnetic Bandgap Structure: A Review

Author(s): Joyeta Basu Pal* and Apu Mistry

Pp: 433-454 (22)

DOI: 10.2174/9789815179361123010016

* (Excluding Mailing and Handling)


This chapter reviews different technologies for tailoring Electromagnetic BandGap (EBG) of some materials and their primary applications. Recently, nitride-based materials have been widely used because of their high emission efficiency. InxGa1-xN/GaN heterostructures (Gallium nitride) play a significant attraction due to the terahertz (THz) emission. InxGa1-xN/GaN heterostructures can be tailored in a wide emission range by the variation of structure, size, and composition, resulting in excellent laser and light-emitting devices. Ultrafast optical excitation of such types of structures leads to large THz electromagnetic emissions. In some cases, the EBG of graphene has adopted a square open-loop shape with a ground plane, which displays good characteristics in dynamically adjusting the electromagnetic wave propagation in the THz range. The EBG structure is being progressively used because of its unique electromagnetic features. Due to the distinguished features of the bandgap for the emission of electromagnetic waves, it is used in various applications, such as high-performance microstrip antennas and low-profile antennas.

Keywords: Electromagnetic bandgap (EBG), Graphene, Negative refractive index, Nitride materials, Terahertz emission.

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