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Current Nanomaterials

Editor-in-Chief

ISSN (Print): 2405-4615
ISSN (Online): 2405-4623

Research Article

Electronical Properties for (CxHyZ2-NO) Nanoclusters

Author(s): Maged H. Muzel, Abbas S. Alwan* and Mohammed L. Jabbar*

Volume 2 , Issue 1 , 2017

Page: [33 - 38] Pages: 6

DOI: 10.2174/2405461502666170227121949

Abstract

Background: Tosylate indicates to the anion of p-toluenesulfonic acid, the tosyl group is also useful as protecting group for amines, it is abbreviated as Ts or Tos.

Objective: In this study geometry optimization, infrared spectra, and some electronical properties have been achieved.

Method: All the calculations have been based on the density functional theory (DFT) at the 3-21G basis set B3LYP level throughout Gaussian 09 package.

Results: geometrical structure, HOMO surfaces, LUMO surfaces, contour maps, total energy, energy gap have been produced throughout the geometry optimization.

Conclusion: The values of energy gap very appropriate to some electronic devices that need semiconductor energy gap approximate to (4.1eV), all molecules owe anti-ferromagnetic material properties because it have beta orbitals at energy levels, that is to say there is new available levels may be occupied.

Keywords: DFT, DOS, infrared spectra, energy gap, total energy, B3LYP.

Graphical Abstract

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