Analysis and Effects of Voids in Cylindrical Surrounding Double- Gate MOSFET for the RF Switches

Title:Analysis and Effects of Voids in Cylindrical Surrounding Double- Gate MOSFET for the RF Switches

Volume: 7 Issue: 2

Author(s): Viranjay M. Srivastava*

Affiliation:

• Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban - 4041,south africa

Keywords: CSDG MOSFET, DG MOSFET, leakage current, nanotechnology, RF switch, switching capacitance, voids, VLSI.

Abstract: Objective: The radio-frequency switches can be designed using MOSFET, FinFET, and various structured MOSFET for example Double-gate, Omega, and gate all around etc. In this research work author has analyzed the effect of porous spaces on the RF switching process.

Method: In the design process of radio-frequency switches some porous spaces generated at the time of fabrication. These porous spaces reduce the performance of the switch and also slower the switching speed. To find out the possibilities of occurrence of these spaces and the performance parameters, a device has been analyzed in this manuscript. The analyzed RF switch has been designed by the Cylindrical Surrounding Double-Gate MOSFET.

Conclusion: In the present research work, the analysis is centered around the effect of these porous space or voids available in between the external channel and internal channel region of the MOSFET. This analysis is in terms of device resistance, capacitance, drain current and various noises for the application of a device as a radio-frequency switch in the wireless communication systems.

Cite this article as:

Srivastava M. Viranjay*, Analysis and Effects of Voids in Cylindrical Surrounding Double- Gate MOSFET for the RF Switches, Nanoscience & Nanotechnology-Asia 2017; 7 (2) . https://dx.doi.org/10.2174/2210681206666160815121140

DOI https://dx.doi.org/10.2174/2210681206666160815121140	Print ISSN 2210-6812
Publisher Name Bentham Science Publisher	Online ISSN 2210-6820