Abstract
Nonvolatile memory from carbon nanotube-based field effect transistors (CNTFETs) was investigated in this paper. The CNTFETs were fabricated employing a single-walled carbon nanotube produced by arc-discharge technique, followed by the lift-off process. Hysteresis was clearly observed in the curve of the drain current versus gate voltage, which makes the CNTFET possible for a nonvolatile memory cell. It was also found that the environmental molecules including water and alcohol evidently affected the memory windows. The roles of the water and alcohol molecules in memory effect were discussed.
Keywords: Nonvolatile, CNTFETs, arc-discharge technique
Current Nanoscience
Title: Nonvolatile Memory from Single-walled Carbon Nanotube-based Field Effect Transistors
Volume: 1 Issue: 1
Author(s): Sigen Wang, Paul Sellin, Qing Zhang and Dajiang Yang
Affiliation:
Keywords: Nonvolatile, CNTFETs, arc-discharge technique
Abstract: Nonvolatile memory from carbon nanotube-based field effect transistors (CNTFETs) was investigated in this paper. The CNTFETs were fabricated employing a single-walled carbon nanotube produced by arc-discharge technique, followed by the lift-off process. Hysteresis was clearly observed in the curve of the drain current versus gate voltage, which makes the CNTFET possible for a nonvolatile memory cell. It was also found that the environmental molecules including water and alcohol evidently affected the memory windows. The roles of the water and alcohol molecules in memory effect were discussed.
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Cite this article as:
Wang Sigen, Sellin Paul, Zhang Qing and Yang Dajiang, Nonvolatile Memory from Single-walled Carbon Nanotube-based Field Effect Transistors, Current Nanoscience 2005; 1 (1) . https://dx.doi.org/10.2174/1573413052953147
DOI https://dx.doi.org/10.2174/1573413052953147 |
Print ISSN 1573-4137 |
Publisher Name Bentham Science Publisher |
Online ISSN 1875-6786 |
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