Abstract
Changing of electrical properties during the manufacturing of the diffusion-junction and implanted-junction rectifiers in a heterostructure with porous epitaxial layer was considered. It was shown that, in spite of the inhomogeneity of the heterostructure, it is possible under specific conditions to increase the sharpness of diffusion-junction and implanted-junction rectifiers and at the same time to increase homogeneity of distribution of dopant concentration in doped area. It was shown that the porosity of epitaxial layer of heterostructure and the use of microwave annealing give the possibility to increase the two above effects. The influence of the variations of dopant concentrations upon electrical properties of p-n junction was also discussed by introducing an analytical approach to the model of mass transport.
Keywords: Diffusion-junction rectifier, electrical properties, implanted-junction rectifier, porous material.
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