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Current Nanoscience


ISSN (Print): 1573-4137
ISSN (Online): 1875-6786

Graphene-based Flexible Field Effect Transistor with Inkjet Printed Silver Electrodes

Author(s): Zhuo Wang, Andrew P. Cook, Xuesong Yang, Zhihong Liu, Qingkai Yu and Maggie Y. Chen

Volume 9, Issue 5, 2013

Page: [635 - 637] Pages: 3

DOI: 10.2174/15734137113099990064

Price: $65


We demonstrate a method to fabricate flexible field effect transistors based on mask-free inkjet printed silver micro-electrodes and wet-transfer of chemical vapor deposition grown graphene. The process is simple, low-cost and repeatable. The transistor shows a field-effect hole mobility of 33 cm2/Vs and on/off ratio of 2.1 with high drain current of 54 mA, which is the highest reported in air at room temperature.

Keywords: Graphene, flexible electronics, field effect transistor, inkjet printing.

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