Temperature Behaviors of In(Ga)As/GaAs Quantum Dots and Patents on the T-Sensitivity of the Lasers

Title: Temperature Behaviors of In(Ga)As/GaAs Quantum Dots and Patents on the T-Sensitivity of the Lasers

Volume: 2 Issue: 3

Author(s): Ju Wu

Affiliation:

Keywords: Quantum dots, photoluminescence, temperature behavior, laser's T-sensitivity

Abstract: In contradiction to the theoretical prediction, the characteristics of the quantum dots are thermally unstable in the relatively high temperature regime. This article briefly summaries the temperature behavior of the self-assembled quantum dots in the In(Ga)As/GaAs system, as experimentally observed in both the time-integrated and time-resolved photoluminescence measurements on thermal anomalies, thermal quenching, relaxation- and radiative-lifetime of the quantum dots. In addition, the efforts made in the relevant patterns to reduce the T sensitivity of the semiconductor lasers based on the quantum dots are described. The article gives a brief review on the recent relevant patents.

Cite this article as:

Wu Ju, Temperature Behaviors of In(Ga)As/GaAs Quantum Dots and Patents on the T-Sensitivity of the Lasers, Recent Patents on Materials Science 2009; 2 (3) . https://dx.doi.org/10.2174/1874464810902030244