Abstract
P-wave-enhanced spin field-effect transistor made of AlGaN/GaN heterostructure was designed for the spintronic devices operated at high power and high temperature. The operation theory is based on the spin-polarized field-effect transistor designed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)]. The mechanism of the p-wave enhancement in AlGaN/GaN heterostructure was investigated. The recent development and related patents in the spin-polarized field-effect transistor were reviewed. In particular, we will focus on the recent patents which could enhance p-wave probability and control of spin precession of 2DEG in the AlGaN/GaN transistor structure.
Keywords: Spin-FET, spin-orbital interaction, Rashba effect, Dresselhaus effect, spintronics
Recent Patents on Nanotechnology
Title: P-wave-enhanced Spin Field Effect Transistor and Recent Patents
Volume: 1 Issue: 3
Author(s): Ming-Hong Gau, Ikai Lo, Wan-Tsang Wang, Jih-Chen Chiang and Mitch Ming-Chi Chou
Affiliation:
Keywords: Spin-FET, spin-orbital interaction, Rashba effect, Dresselhaus effect, spintronics
Abstract: P-wave-enhanced spin field-effect transistor made of AlGaN/GaN heterostructure was designed for the spintronic devices operated at high power and high temperature. The operation theory is based on the spin-polarized field-effect transistor designed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)]. The mechanism of the p-wave enhancement in AlGaN/GaN heterostructure was investigated. The recent development and related patents in the spin-polarized field-effect transistor were reviewed. In particular, we will focus on the recent patents which could enhance p-wave probability and control of spin precession of 2DEG in the AlGaN/GaN transistor structure.
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Cite this article as:
Gau Ming-Hong, Lo Ikai, Wang Wan-Tsang, Chiang Jih-Chen and Chou Ming-Chi Mitch, P-wave-enhanced Spin Field Effect Transistor and Recent Patents, Recent Patents on Nanotechnology 2007; 1 (3) . https://dx.doi.org/10.2174/187221007782360457
DOI https://dx.doi.org/10.2174/187221007782360457 |
Print ISSN 1872-2105 |
Publisher Name Bentham Science Publisher |
Online ISSN 2212-4020 |
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