Abstract
Aim: The aim of this study is the derivation and assessment of quantum scaling length of Cylindrical Surrounding Double-Gate (CSDG) MOSFET with respect to Silicon body thickness.
Objectives: To derive the quantum natural length of CSDG MOSFET with respect of Silicon body Thickness, observe the behaviour of the CSDG MOSFET at the nanoscale regime and compare the behaviour of the CSDG MOSFET with Cylindrical Surrounding Gate (CSG) MOSFET.
Methods: The authors employed the mathematical analysis. The quantum energy level is analysed using Schrodinger equation by assuming one-dimensional approach and a negligible potential well.
Results: The analytical results obtained from classical and quantum natural length are compared with the numerical simulations. Also, the model was compared with CSG MOSFET. Results show that proposed analytical close-form expression that approximately matches the numerical simulation, and the proposed CSDG MOSFET will be better than CSG MOSFET at quantum level even though it has smaller quantum natural length than CSG MOSFET.
Conclusion: In this research work, quantum scaling length model and quantum scaling factor have been proposed using the quantum confinement approach. The performance assessment of the CSDG MOSFETs provided an opportunity of determining the scaling limit of CSDG MOSFETs by evaluating the trade-off between the quantum natural length and the classical natural length of CSDG MOSFETs. Results obtained were compared with CSG MOSFETs to show that CSDG MOSFETs offer better device characteristics.
Keywords: Quantum confinement, quantum scaling length, quantum well, CSDG MOSFET, nanotechnology, VLSI.
Graphical Abstract
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