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Micro and Nanosystems

Editor-in-Chief

ISSN (Print): 1876-4029
ISSN (Online): 1876-4037

Research Article

Design, Simulation and Analysis of Perforated RF MEMS Capacitive Shunt Switch

Author(s): Srinivasa Rao Karumuri*, Ch. Gopi Chand, Koushik Guha, Niladri P. Maity, Reshmi Maity, Santanu Maity, Dinnipati Prathyusha and Girija S. Kondavitee

Volume 13, Issue 4, 2021

Published on: 19 August, 2019

Page: [448 - 457] Pages: 10

DOI: 10.2174/1876402911666190820094947

Abstract

Objective: This paper presents the design and simulation of double bridge-type capacitive RF MEMS switch by using FEM Tool.

Methods: It is mainly concentrated on a low pull-in voltage, capacitance, and RF analysis. The beam is considered as a gold metal having the length of 595 μm along with the 1μm thickness and the dielectric is taken as Silicon nitride (Si3N4) by using Ashby’s method. The non-uniform meandering technique and perforations are used to reduce the pull-in voltage, by changing different beam thickness, air gap and materials.

Results: The pull-in voltage of the proposed RF MEMS switch is 1.2 V. The scattering parameters are simulated by using Ansoft HFSS software. The simulation results of S-parameters such as return loss, insertion losses are, -19.27 dB and -0.20dB. The switch having good isolation is -63.94 dB at 8 GHz.

Conclusion: The overall switch is designed with different beam thickness, various gap, and different materials to identify the best performance of the switch for low-frequency applications i.e X-bands.

Keywords: Spring constant, pull-in voltage, switching time, COMSOL, FEM tool, Ashby's method.

Graphical Abstract

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