Semiconductor Strain Metrology: Principles and Applications

Indexed in: Scopus, EBSCO.

This book surveys the major and newly developed techniques for semiconductor strain metrology. Semiconductor strain metrology has emerged in recent years as a topic of great interest to researchers ...
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Conclusion and Outlook

Pp. 126-128 (3)

DOI: 10.2174/978160805359911201010126

Author(s): Terence K.S. Wong


Some general remarks are given for all the strain characterization methods discussed in previous chapters. The methods can be categorized into those where a strain related material property must be known and those that do not require such a priori knowledge. The different available methods are briefly compared with each other in terms of the strain resolution, spatial resolution, throughput and accessibility. The future application of semiconductor strain characterization techniques in electrical energy storage devices is suggested and a recent development of strain characterization by electron backscattering from epitaxial layers is highlighted.