Semiconductor Strain Metrology: Principles and Applications

Indexed in: Scopus, EBSCO.

This book surveys the major and newly developed techniques for semiconductor strain metrology. Semiconductor strain metrology has emerged in recent years as a topic of great interest to researchers ...
[view complete introduction]

US $

*(Excluding Mailing and Handling)

Atomic Force Microscopy Digital Image Correlation Method

Pp. 102-111 (10)

DOI: 10.2174/978160805359911201010102

Author(s): Terence K.S. Wong


An in situ method of strain characterization based on image analysis of atomic force microscope images is presented. The sample topographic image is measured before and after deformation using an atomic force microscope with closed loop feedback control of position. By using a mapping function for each point in the image and performing a correlation using the height data, the displacement, strain and strain gradient can be deduced. The digital image correlation algorithm is most suitable for microelectromechanical materials and devices.


X-rays, Synchrotron, Beamline, Microdiffraction, Bragg law, Reciprocal space, Electromigration.