Relative Intensity Noise for Self-Assembled III-Nitrides Quantum-Dot Lasers

Author(s): Hussein B. AL-Husseini, Amin H. Al-Khursan

Journal Name: Recent Patents on Electrical Engineering
Continued as Recent Patents on Electrical & Electronic Engineering

Volume 3 , Issue 3 , 2010


Rate-equation model with a four-level system is used to study relative intensity noise (RIN) in III-nitrides quantum-dot (QD) lasers. These levels are: the ground- and excited-states in the QD, the wetting layer (WL) and separate confinement heterostructure (SCH) layers. The most possible relaxation paths and carrier transport are considered in two types of QD structures: GaN/AlxGa1-xN/AlN and InxGa1-xN/ In0.04Ga0.96N /GaN. Effect of: QD and WL compositions, QD sizes, doped and undoped active regions is studied. The RIN is shown to be reduced with higher Al content in the WL, while an increased is shown for InGaN QD structures. RIN decreases with size reduction. Increased doping until 12 acceptors/QD reduced RIN also. The article presents some promising patents on Quantum-Dot Lasers.

Keywords: III-Nitrides, Relative Intensity Noise (RIN), Quantum-Dot (QD), semiconductor lasers.

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Article Details

Year: 2010
Published on: 01 March, 2012
Page: [211 - 217]
Pages: 7
DOI: 10.2174/1874476111003030211
Price: $65

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