The Drift Response to a High-Electric-Field in Carbon Nanotubes

Title: The Drift Response to a High-Electric-Field in Carbon Nanotubes

VOLUME: 6 ISSUE: 5

Author(s):Rachana Vidhi, Michael L. P. Tan, Tanuj Saxena, Abdul Manaf Hashim and Vijay K. Arora

Affiliation:Division of Engineering and Physics, Wilkes University, Wilkes-Barre, PA18707, USA.

Keywords:Carbon nanotubes, CNT, carrier concentration, high-electric-field transport, intrinsic velocity, saturation velocity, Drift Response, High-Electric-Field, Arora's formalism, high intrinsic transconductance, transistor (MOSFET), CNT transistors, Arora's nonequilibrium distribution function, graphene nanostructures, Monte Carlo experiments, CNT devices, Nonparabolic energy, double-wall CNT transistor, Shur's model, Ballistic Mobility, Fermi-Dirac distribution function, field effect transistor (FET)

Abstract: The carrier statistics in carbon nanotubes (CNTs) with nonparabolic energy spectrum is studied in order to predict the ultimate (intrinsic) drift velocity as a function of temperature, concentration, and chirality. The extremely high mobilities in CNTs do not necessarily lead to higher saturation velocity that is limited to the intrinsic velocity calculated using Aroras formalism [V. K. Arora, Current Nanoscience 5, 227(2009)]. The ballistic nature of the mobility when CNT length is smaller than the scattering-limited mean free path is delineated. The results are of enormous importance in extracting carrier transport properties from a variety of experiments performed on CNTs.

Cite this article as:

Rachana Vidhi, Michael L. P. Tan, Tanuj Saxena, Abdul Manaf Hashim and Vijay K. Arora, “ The Drift Response to a High-Electric-Field in Carbon Nanotubes”, Current Nanoscience (2010) 6: 492. https://doi.org/10.2174/157341310797575050

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