Advances in III-V Semiconductor Nanowires and Nanodevices

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Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires ...
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III-V Semiconductor Nanowire Light Emitting Diodes and Lasers

Pp. 145-157 (13)

Junichi Motohisa, Katsuhiro Tomioka, Bin Hua, Kumar S.K. Varadwaj, Shinjiroh Hara, Kenji Hiruma and Takashi Fukui


We describe the growth and optical properties of III-V semiconductor nanowires and their application to nanoscale photonic devices such as Fabry-Perot cavity, waveguides, optically-pumped lasers, and lightemitting diodes. The nanowires were grown by selective-area metalorganic vapor phase epitaxy (SA-MOVPE) on the (111) oriented substrates. Nanowires containing heterostructures in their radial direction, that is, core-shell heterostructures, have also been realized by controlling the growth mode during SA-MOVPE. The nanowires were characterized by micro-photoluminescence measurements and those detached from the grown substrate showed resonant peaks associated with Fabry-Perot cavity modes. It was simultaneously shown that core-shell hetereostructured nanowires exhibited stronger photoluminescence than bare nanowires due to reduced surface non-radiative recombination. Furthermore, core-shell nanowires exhibited lasing oscillation originating from the cavity formed by both end facets at pulsed-laser excitation. Meanwhile, electroluminescence from core-shell nanowires was also demonstrated.


Metalorganic vapor phase epitaxy, selective-area growth, core-shell heterostructures, fabry-perot cavity, waveguide, laser, light emitting diode.


Graduate School of Information Science and Technology, Hokkaido University, Japan.