Role of Deposition Pressure on Properties of Phosphorus Doped Hydrogenated Nano-Crystalline Silicon (nc-Si:H) Thin Films Prepared by the Cat-CVD Method

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Author(s): Bharat Gabhale, Ashish Waghmare, Subhash Pandharkar, Ajinkya Bhorde, Shruthi Nair, Priti Vairale, Vidya Doiphode, Pratibha Shinde, Ashvini Punde, Yogesh Hase, Nilesh Patil, Mohit Prasad, Sandesh Jadkar*

Journal Name: Recent Innovations in Chemical Engineering
Formerly: Recent Patents on Chemical Engineering

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Abstract:

Phosphorus doped hydrogenated nano-crystalline silicon (nc-Si:H) thin films were synthesized by catalytic chemical vapor deposition (Cat-CVD) method. The effect of deposition pressure on opto-electronic and structural properties was studied using various analysis techniques such as low angle XRD analysis, FTIR spectroscopy, Raman spectroscopy, UV-Visible spectroscopy and dark conductivity etc. From low angle XRD and Raman spectroscopy analysis it is observed that increase in deposition pressure causes Si:H films to transform and transit from amorphous to crystalline phase. At optimized deposition pressure (300 mTorr), phosphorous doped nc-Si:H films having crystallite size of  29 nm and crystalline volume fraction of  58 % along with high deposition rate ( 29.7 Å/s) have been obtained. The band gap was found to be  1.98 eV and hydrogen content was as low as ( 1.72 at. %) for these films. The deposited films can be useful as n-type layer for Si:H based p-i-n, tandem and c-Si hetero-junction solar cells

Keywords: Cat-CVD, Phosphorus doped nc-SI:H, Electrical properties, XRD, Raman Spectroscopy

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(E-pub Ahead of Print)
DOI: 10.2174/2405520413999200730154255
Price: $95

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