Background: Among various chalcogenides, GeSbSe shows a good transmittance in the
visible, NIR and, midIR spectrum from 1-20 μm and also demonstrates excellent moldability.
Objective: In current work, we have characterized GeSbSe glass for use in sensor mechanism and for
adaptive polarization control.
Methods: After analysing an earlier work regarding GeSbSe based Silicon on insulator optical waveguide,
we implemented GeSbSe in a low refractive index slot region of SOI slot optical waveguide.
Change in waveguide geometry can cause a shift in the dispersion profile, but a relatively distinct
pattern has been observed. T-slot waveguide structure has also been analysed, where GeSbSe has
been implemented in low refractive index slot regions with the Graphene layer beneath the horizontal
slot region for enhancement in tailoring ability of the birefringence parameters.
Results: Literature review led to the presence of absorption resonance wavelength in SOI slot optical
waveguide with our proposed composition, which is attributed to the single average harmonic oscillator
property of the chalcogenides. In the T-slot waveguide structure, it was found that a shift in
Fermi energy and Mobility values can bring a change in birefringence, even with constant waveguide
geometry and operating wavelength.
Conclusion: Absorption resonance wavelength in GeSbSe slot optical waveguide has been exploited
for proposing the refractive index dispersion sensor. Our design approach regarding T-slot waveguide
may lead to the provision of automated polarization management sources for the light on chip