Background: Lead Zirconate Titanate (PZT) films were synthesized by sol gel technique.
The growth of films on ITO, Si\SiO2\Ti\Au, Si\Au and Si\SiO2\Ti\Al substrates discussed.
In this study, Zirconium nitrate, lead acetate, and Ti (IV) isoproxide used as raw materials. Besides,
acetic acid used as a solvent and 2-methoxy ethanol used as a stabilizer for Ti structure.
Along with this, PZT films have perovskite structure, thin-film perovskite structure with high dielectric
properties and hysteresis loop have been investigated.
Methods: The effects of the type’s substrate on dielectric properties the ferroelectric properties
were investigated and compared PZT film which deposited in different substrates. The films annealed
at 600°C to complete crystalline films. XRD shows tetragonal PZT films have a strong perovskite
structure with  prefer plane orientation. SEM and cross-section technique used to
study for PZT surface films.
Results: The dielectric constant at room temperature was different values depending on the types
of substrate. The dielectric properties of the PZT films measured at 1 kHz were 120-400 dielectric
constant and dielectric loss 0.02-0.08 at room temperature and 1 kHz.
Conclusion: The largest remnant polarization (Pr) and coercive field (Ec) are obtained for PZT
film deposited on Si\SiO2\Ti\Au substrate, equal to 26.6 mC/cm2 and 38.3 kV/cm, as compared to
16.3 mC/cm2 and 32.2 kV/cm2 for PZT film deposited on ITO substrate.