Amorphous-to-Nanocrystalline Transition in Silicon Thin Films by Hydrogen Diluted Silane Using PE-CVD Method

Author(s): Ashok Jadhavar, Vidya Doiphode, Ajinkya Bhorde, Yogesh Hase, Pratibha Shinde, Ashvini Punde, Priti Vairale, Shruthi Nair, Subhash Pandharkar, Ashish Waghmare, Nilesh Patil, Dinkar Patil, Mohit Prasad, Sandesh Jadkar*

Journal Name: Recent Innovations in Chemical Engineering
Formerly Recent Patents on Chemical Engineering

Volume 14 , Issue 1 , 2021


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Abstract:

Objective: Herein, we report the effect of variation of hydrogen flow rate on the properties of Si:H films synthesized using PE-CVD method. Raman spectroscopy analysis show an increase in crystalline volume fraction and crystallite size implying that hydrogen flow in PE-CVD promotes the growth of crystallinity in nc-Si:H films with an expense of a reduction in deposition rate.

Methods: FTIR spectroscopy analysis indicates that hydrogen content in the film increases with an increase in hydrogen flow rate and hydrogen is predominantly incorporated in Si-H2 and (Si-H2)n bonding configuration. The optical band gap determined using E04 method and Tauc method (ETauc) show an increasing trend with an increase in hydrogen flow rate and E04 is found higher than ETauc over the entire range of hydrogen flow rate studied.

Results and Conclusion: We found that the defect density and Urbach energy increases with an increase in hydrogen flow rate. Photosensitivity (σPhotoDark) decreases from ∼103 to ∼1 when hydrogen flow rate is increased from 30 sccm to 100 sccm and can be attributed to amorphous-to-nanocrystallization transition in Si:H films. The results obtained from the present study demonstrated that hydrogen flow rate is an important deposition parameter in PECVD to synthesize nc-Si:H films.

Keywords: Amorphous-to-nanocrystalline transition, Raman Scattering, FTIR spectroscopy, UV-Visible spectroscopy, Electrical properties, silicon thin films.

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Article Details

VOLUME: 14
ISSUE: 1
Year: 2021
Published on: 04 February, 2021
Page: [58 - 70]
Pages: 13
DOI: 10.2174/2405520413999200517124810
Price: $65

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