A New Approach to Design and Implementation of 2-Input XOR Gate Using 4-Transistor

Author(s): Heranmoy Maity*

Journal Name: Micro and Nanosystems

Volume 12 , Issue 3 , 2020

Become EABM
Become Reviewer
Call for Editor

Graphical Abstract:


Aim: This paper proposed the design and implementation of a 2-input XOR gate using 4- transistor.

Method: The XOR gate can be designed using NOT gate and 2:1 multiplexer. The NOT gate is designed using two metal–oxide–semiconductor field-effect transistors MOSFETs and an approximate 2:1 multiplexer. The 2:1 multiplexer is designed using two MOSFETs. So, an XOR gate can be designed using four transistors.

Results: The proposed work theoretically and experimentally describes the 2-input XOR gate using 4- transistor. The proposed work was verified using Xilinx (ISE Design Suite).

Keywords: Logic gate, inverter, MOSFET, multiplexer, XOR gate, transistsor.

open access plus

Rights & PermissionsPrintExport Cite as

Article Details

Year: 2020
Published on: 01 December, 2020
Page: [240 - 242]
Pages: 3
DOI: 10.2174/1876402912666200309120205

Article Metrics

PDF: 16