Background: In nano and microelectronics, device performance enhancement is limited
by downscaling. Introduction of intentional mechanical stress is a potential mobility booster to
overcome these limitations. This paper explores the key design challenges of stress-engineered
FinFETs based on the epitaxial SiGe S/D at 7 nm Technology node.
Objective: To study the mechanical stress evolution in a tri-gate FinFET at 7 nm technology node
using technology CAD (TCAD) simulations. Using stress maps, we analyze the mechanical stress
impact on the transfer characteristics of the devices through device simulation.
Methods: 3D sub-band Boltzmann transport analysis for tri-gate PMOS FinFETs was used, with
2D Schrödinger solution in the fin cross-section and 1D Boltzmann transport along the channel.
Results: Using stress maps, the mechanical stress impact on the transfer characteristics of the
device through device simulation has been analyzed.
Conclusion: Suitability of predictive TCAD simulations to explore the potential of innovative
strain-engineered FinFET structures for future generation CMOS technology is demonstrated.
Keywords: Strain engineering, FinFETs, SiGe, source/drain stressor design, stress tuning, TCAD, ballistic transport, driftdiffusion,
quantum transport solver, Subband Boltzmann transport equation solver.
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