Background: Joining nanosized building blocks is a promising approach to fabricate
functional nanodevices and nanosystems. Nanojoining approach also helps in integrating these
nanodevices and nanosystems for the miniaturization of devices. The nanodevices are mainly fabricated
by joining metallic and semiconductor nanowires/nanotubes.
Objective: Silicon Carbide Nanowires (SiC-NWs) have become important nanomaterials for future
nanoscale devices due to their unique physical properties.
Method: In this paper, nanowelding of SiC-NWs has been demonstrated using ion beam technology.
SiC-NWs were irradiated by 5 MeV proton beam as per SRIM code simulation. Nanojoining
of SiC-NWs was confirmed by scanning electron microscopy, transmission electron microscopy
and X-ray diffraction.
Conclusion: Joining of individual SiC-NWs by 5 MeV proton beam irradiation was successfully
achieved at the contact point as X-, Y-, II-, and T-shaped welded junctions.