Title:A Physics-based Memristor Model Based on Chalcogenide Alloy
VOLUME: 11 ISSUE: 5
Author(s):Lei Wang, Ci-Hui Yang, Jing Wen and Yuan-Xiu Peng
Affiliation:School of Information Engineering, Nanchang Hang Kong University, Nanchang 330063, P.R. China.
Keywords:Cycle, chalcogenide, Ge2Sb2Te5, memristor, model.
Abstract:Memristor, as the fourth fundamental circuit element, has recently attracted considerable attention
due to its widespread applications from programmable logic to neural networks. Today, the
most representative memristor consists of a thin film of titanium oxide sandwiched by two electrodes.
However, such a memristor gives rise to a relatively low switching speed, discouraging it from receiving
more research enthusiasm. To overcome the disadvantages of the already established memristors
(e.g. low switching speed and poor endurance) and thus to optimize the memristor performance, we
proposed a novel memristor concept using chalcogenide alloy that has been widely used for nonvolatile
memory storage. According to the developed electro-thermal model, the designed memristor
using chalcogenide alloy clearly shows a variation of resistance along with the history of current as well as a fast switching
speed and ultra-low energy consumption.
