Redistribution of Impurities During Solid Phase Epitaxy
Pp. 129-142 (14)
It is found that impurities are redistributed during solid phase epitaxy, which
cannot be explained by normal diffusion theory. A model is proposed, where the driving
force of the redistribution is the phase transition from amorphous and crystalline forms.
The model has parameters of a segregation coefficient m, which is between amorphous
and crystalline Si, and an introduced parameter of reaction length l, that is, the distance
where impurities are exchanged. The model reproduces various experimental data by
using corresponding parameter values with the same theoretical framework.
Ion implantation, solid phase epitaxy, pile-up, arsenic, phosphorous,
boron, reaction length, segregation, amorphous layer, regrowth, diffusion,
crystalline layer, amorphous/crystal interface, phase transition, thermal annealing,
lattice site, phase field model.
Fujitsu limited Minatoku kaigan 1-11-1 Tokyo Japan.