Ion Implantation and Activation

Volume: 2

Indexed in: EBSCO.

Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced ...
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Amorphous Layer Thickness

Pp. 78-120 (43)

Kunihiro Suzuki


A parameter of thorough dose, Φa/c is introduced to express continuous amorphous layer thickness. Φa/c is defined by the dose of ions that pass through the amorphous/crystal interface, and the thickness of amorphous layer da is expressed by Φa/c combined with parameters for ion implantation profiles. Φa/c is independent of ion implantation conditions but depends on impurities. Φa/c for Ge, Si, As, P, B, In, and Sb were evaluated. Consequently, we can predict da over wide ion implantation conditions.


Ion implantation, amorphous, solid phase epitaxy, tilt, through dose, damage, shallow junction, annealing, activation, sheet resistance, residual defects, substrate temperature, displacement energy, transferred energy, amorphous/crystal interface, cross section, pocket ion implantation.


Fujitsu limited Minatoku kaigan 1-11-1 Tokyo Japan.