Amorphous Layer Thickness
Pp. 78-120 (43)
A parameter of thorough dose, Φa/c is introduced to express continuous
amorphous layer thickness. Φa/c is defined by the dose of ions that pass through the
amorphous/crystal interface, and the thickness of amorphous layer da is expressed by Φa/c combined with parameters for ion implantation profiles. Φa/c is independent of ion
implantation conditions but depends on impurities. Φa/c for Ge, Si, As, P, B, In, and Sb
were evaluated. Consequently, we can predict da over wide ion implantation conditions.
Ion implantation, amorphous, solid phase epitaxy, tilt, through dose,
damage, shallow junction, annealing, activation, sheet resistance, residual defects,
substrate temperature, displacement energy, transferred energy, amorphous/crystal
interface, cross section, pocket ion implantation.
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