Ion Implantation and Activation

Volume: 2

Indexed in: EBSCO.

Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced ...
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Dose Loss

Pp. 69-77 (9)

Kunihiro Suzuki

Abstract

Ion implanted impurity also plays a role for sputtering substrate atoms. The profiles are influenced by the sputtering. The database for the sputtering has also been developed. We described a model for the profiles where sputtering phenomenon is included. The model predicts the profile becomes invariable when the dose exceeds a certain value.

Keywords:

Sputtering, dose loss, backscattering, dose, sublimation energy, reduced energy, nuclear stopping power, electron stopping power, Gaussian profile, surface, B, P, As, Si.

Affiliation:

Fujitsu limited Minatoku kaigan 1-11-1 Tokyo Japan.