Analytical Model for Two-Dimensional Profile in MOSFET’s
Pp. 18-31 (14)
Two-dimensional profile model for ion implantation at high tilt angle was
derived, in order to describe the pocket ion implantation of MOSFETs. Then we can
generate two-dimensional profile of ion implantation for the full MOS process neglecting
diffusion of dopants, in order to predict electrical characteristic of MOSFETs.
Ion implantation, two-dimensional profile, lateral distribution,
MOSFET’s, co-implantation, flash lamp annealing, redistribution, diffusion,
inverse modeling, extension, straggling, lateral straggling, reverse short channel
effect, pocket ion implantation, VLSI.
Fujitsu limited Minatoku kaigan 1-11-1 Tokyo Japan.