Pp. 302-375 (74)
Ion implantation profiles are expressed by the Pearson function with first,
second, third and fourth moment parameters of Rp , ΔRp , γ , and β. We can derive
an analytical model for these profile moments by solving a Lindhard-Scharf-Schiott
(LSS) integration equation using perturbation approximation. This analytical model
reproduces Monte Carlo data which were well calibrated to reproduce a vast
experimental database. The extended LSS theory is vital for instantaneously predicting
ion implantation profiles with any combination of incident ions and substrate atoms
including their energy dependence.
Ion implantation, LSS theory, amorphous, Monte Carlo, nuclear
stopping power, electron stopping power, range, projected range, skewness,
kurtosis, lateral straggling, Thomas-Fermi potential, ZBL potential, nuclear cross
section, electron cross section, cross section.
Fujitsu limited Minatoku kaigan 1-11-1 Tokyo Japan.