Self-Bonded Silicon Carbide Layer on Carbon Foil: Preparation and Properties

Author(s): Sergey K. Brantov, Dmitry N. Borisenko, Ivan M. Shmytko, Edward A. Steinman

Journal Name: Recent Patents on Materials Science
Continued as Current Materials Science

Volume 6 , Issue 3 , 2013


We suggest a method of growing silicon carbide crystal layers on carbon foil. The material is produced by moving a carbon foil tape at a speed up to 2.5 m/min in dynamic vacuum against a graphite capillary feeder that contains molten silicon. As a result of various chemical vapor reactions, SiC crystals grow at a speed up to 1.5 mm/s.. The crystals and the foil form a composite material with semiconducting properties. In this article, we have discussed relevant patents.

Keywords: CVD (chemical vapor deposition), graphite foil, nanocomposites, (PL) photoluminescence, semiconducting properties, XRD (X-ray diffraction).

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Article Details

Year: 2013
Published on: 31 August, 2013
Page: [253 - 257]
Pages: 5
DOI: 10.2174/18744648113069990015
Price: $58

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