Self-Bonded Silicon Carbide Layer on Carbon Foil: Preparation and Properties

Title:Self-Bonded Silicon Carbide Layer on Carbon Foil: Preparation and Properties

Volume: 6 Issue: 3

Author(s): Sergey K. Brantov, Dmitry N. Borisenko, Ivan M. Shmytko and Edward A. Steinman

Affiliation:

Keywords: CVD (chemical vapor deposition), graphite foil, nanocomposites, (PL) photoluminescence, semiconducting properties, XRD (X-ray diffraction).

Abstract: We suggest a method of growing silicon carbide crystal layers on carbon foil. The material is produced by moving a carbon foil tape at a speed up to 2.5 m/min in dynamic vacuum against a graphite capillary feeder that contains molten silicon. As a result of various chemical vapor reactions, SiC crystals grow at a speed up to 1.5 mm/s.. The crystals and the foil form a composite material with semiconducting properties. In this article, we have discussed relevant patents.

Cite this article as:

Brantov K. Sergey, Borisenko N. Dmitry, Shmytko M. Ivan and Steinman A. Edward, Self-Bonded Silicon Carbide Layer on Carbon Foil: Preparation and Properties, Recent Patents on Materials Science 2013; 6 (3) . https://dx.doi.org/10.2174/18744648113069990015