Abstract
Background: PbSe is A4B6 group narrow gap material with energy gap about 0.3 eV. InSe is A3B6 group with energy gap 1.3 eV and layered structure. In the layers, covalent bonds are present, while Van Der Waals force acts between layers. When Pb ratio is high and the In ratio is low we have PbSe, but with nanostructure in present work. Hence better electrical properties are expected. In the case of higher indium ratio and lower Pb ratio, we obtain really a mixture of PbSe and InSe, with expected lower conductivity. Authors revised all patents relating to the effect of In addition to PbSe thin films.
Objective: The aim of the present work is to study the effect of In substitution on the structural, electrical and optical properties of PbSe nanocrystalline films.
Method: The bulk compositions Pb55.03In6.58Se38.39 and Pb32.54In29.55Se38.01 were prepared by solid solution reaction and their thin films were deposited by thermal evaporation technique. The structural and morphological analyses were carried out by X-Ray Diffraction, scanning electron microscope, and high resolution transmission electron microscope. The optical properties were studied by using spectrophotometer measurements. The galvanomagnetic properties were studied by means of conductivity, Hall Effect and magnetoresistance.
Results and Conclusion: XRD of Pb32.54In29.55Se38.01 and Pb55.03In6.58Se38.39 films showed polycrystalline cubic structure. The optical band gap for Pb55.03In6.58Se38.39 and Pb32.54In29.55Se38.01 films is determined as 1.77 and 1.67 eV, respectively. Electrical conductivity, charge carriers concentration, mobility and magnetoresistance of Pb32.54In29.55Se38.01 and Pb55.03In6.58Se38.39films were investigated as a function of temperature. The films with the higher Pb content demonstrated higher crystallinity, conductivity, mobility, and magnetoresistance.
Keywords: SeInPb, structural, optical, transmittance, reflectance, galvanomagnetic, conductivity, magnetoresistance.
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