A Comparison of Temperature Dependence of I-V Characteristics in CNTFETs Models

Title:A Comparison of Temperature Dependence of I-V Characteristics in CNTFETs Models

Volume: 1 Issue: 1

Author(s): Gennaro Gelao, Roberto Marani and Anna Gina Perri

Affiliation:

Keywords: CNTFET, modelling, device simulation, I-V characteristics, temperature effects, verilog-A, computer aided design.

Abstract: This paper presents a comparison of temperature dependence of I-V characteristics in Carbon Nanotube Field Effect Transistors (CNTFETs) models proposed in the literature in order to identify the one more easily implementable in simulation software for electronic circuit design. At first we consider a compact, semi-empirical model, already proposed by us, performing I-V characteristic simulations at different temperatures. Our results are compared with those obtained with two other models: the numerical FETToy model and the Stanford-Source Virtual Carbon Nanotube Field-Effect Transistor model (VS-CNFET), obtaining I-V characteristics comparable with those of two examined models, but with CPU calculation times much lower.

Cite this article as:

Gelao Gennaro, Marani Roberto and Gina Perri Anna, A Comparison of Temperature Dependence of I-V Characteristics in CNTFETs Models, Current Nanomaterials 2016; 1 (1) . https://dx.doi.org/10.2174/2405461501666160323005447