Abstract
We treat analytical models for two-dimensional profiles in patterned substrates. It is shown that the doses in the scaled MOSFET’s gates become significantly smaller that the doses in the large gate. We should therefore be careful about ion implantation conditions in scaled devices considering the two-dimensional effects. We further evaluated the relationship between vertical and lateral junction depth using the model.
Keywords: Ion implantation, two-dimensional profile, lateral distribution, gate, gate length, gate depletion, Gaussian, contact pattern, junction depth, lateral junction depth, Monte Carlo, As, B, MOSFET’s, Gaussian.
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