Nanoscience & Nanotechnology-Asia

ISSN (Print): 2210-6812
ISSN (Online): 2210-6820

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Volume 13, Issue 1

Research Article

Performance Analysis of Gate Engineered High-K Gate Oxide Stack SOI Fin-FET for 5 nm Technology

Article ID: e211222212094
Author(s): Pidaparthy Vijaya and Rohit Lorenzo*
DOI: 10.2174/2210681213666221221141546

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