Bipolar Transistor and MOSFET Device Models

The pn Junction

Author(s): Kunihiro Suzuki

Pp: 93-171 (79)

Doi: 10.2174/9781681082615116010005

* (Excluding Mailing and Handling)

Abstract

pn junction is a basic component of other devices such as bipolar transistors and MOSFETs. Therefore, the analysis in this chapter is indispensable for understanding the devices treated in entire of this book. The prominent feature of pn junction is that it rectifies the current flow, where it allows current flow in one direction but not in opposite direction. We study the potential distribution, current voltage characteristics, and breakdown of the pn junction.


Keywords: Avalanche breakdown, Built-in potential, Debye length, Depletion approximation, Depletion width, Diffusion current, Drift current, High injecting effects, Linearly graded junction, pn junction, Poisson equation, Recombination current, Step junction, Tunneling probability, Zener breakdown.

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