Physics and Technology of Semiconductor Thin Film-Based Active Elements and Devices

New Narrow-gap Semiconductor ZnCdHgTe: Growth Technology and Principal Features of ZnCdHgTe-Based Structures

Author(s): Halyna Khlyap

Pp: 63-77 (15)

Doi: 10.2174/978160805021510901010063

* (Excluding Mailing and Handling)

Abstract

Preparation and main electrophysical characteristics of narrow-gap semiconductor ZnCdHgTe thin films are described. Experimental room-temperature current-voltage and capacitance-voltage dependences are presented. Energy band diagram construction procedure and results of the numerical simulation of experimental data are also discussed.

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