Abstract
For silicon direct bonding SOI accelerometers, due to the stress in device layer, there is vertical deformation in proof-mass, which can make the accelerometers fail to work. In the light of mechanics theory and by dividing the proof - mass into several continuous varied cross-section beams, utilizing symmetric continuous conditions of the beams, and combining deformation compatibility, a vertical deformation mechanics model of proof-mass is proposed. The validity of the model is demonstrated by measuring the experimental structures with SOI device layer 50 μm and oxide layer 5 μm. The model could hopefully be helpful in further exploration on deformation of MEMS structure.
Keywords: SOI accelerometer, proof-mass, vertical deformation, mechanics model
Related Books
Nanoscale Field Effect Transistors: Emerging Applications
Nanoelectronics Devices: Design, Materials, and Applications Part II
Nanoelectronics Devices: Design, Materials, and Applications (Part I)
Role of Nanotechnology in Cancer Therapy
Synthesis and Applications of Semiconductor Nanostructures
Pathways to Green Nanomaterials: Plants as Raw Materials, Reducing Agents and Hosts
Applications of Nanomaterials in Medical Procedures and Treatments
Synthesis of Nanomaterials
Nanobiotechnology: Principles and Applications
Bio-Inspired Nanotechnology
3