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Recent Patents on Electrical Engineering

Editor-in-Chief

ISSN (Print): 1874-4761
ISSN (Online): 2213-1132

Recent Patents on C-V Profiling of Heterostructures Based on Narrow-Gap Semiconductor ZnCdHgTe

Author(s): Andre M. Andrukhiv, Halyna M. Khlyap, Viktor I. Laptev, Petro G. Sydorchuk and Jacek Polit

Volume 2, Issue 3, 2009

Page: [239 - 244] Pages: 6

DOI: 10.2174/1874476110902030239

Price: $65

Abstract

C-V-profiling has been performed for p-p heterostructures based on new narrow-gap compaund semiconductor ZnCdHgTe. The effective dielectric constant of the whole heterostructure and corrected carriers profile have been calculated as function of the transition region width for various compositions localized near the heterointerface. A good agreement between experimental and numerical simulation of C-V characteristics was demonstrated. Recent patents on thin film technologies are also discussed in this paper.

Keywords: ZnCdHgTe film, capacitance-voltage characteristic, charge carriers profile


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